Phase-field approach to epitaxial crystal growth under stress

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F12%3A00201705" target="_blank" >RIV/68407700:21340/12:00201705 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Phase-field approach to epitaxial crystal growth under stress
Original language description
The phase-field method has appeared in the context of diffuse interfaces. It has been applied to the three major materials processes: solidification, solid-state phase transformation, and grain growth and coarsening. Very recently, a number of new phase-field models have been developed for modelling thin films and surfaces (see [3]). The first part of this contribution is concerned with the phase-field model of spiral crystal growth [5] described by the Burton-Cabrera-Frank theory [2]. We then present computational studies related to the pattern formation and to the dependence on model parameters. The second part is concerned with the phase-field model [4, 6] of heteroepitaxial growth. Finally, we present our latest results.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BA - General mathematics
OECD FORD branch
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Project
<a href="/en/project/LC06052" target="_blank" >LC06052: The Nečas Center for Mathematical Modeling</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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