Diamond Films Deposited by Oxygen-Enhanced Linear Plasma Chemistry
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F13%3A00211669" target="_blank" >RIV/68407700:21340/13:00211669 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Diamond Films Deposited by Oxygen-Enhanced Linear Plasma Chemistry
Original language description
Diamond thin film growth over large area is mandatory for their industrial uses. Linear antenna microwave CVD process is novel method for growing diamond film at low pressure ranges (below 100 Pa) and low plasma temperature over large areas. Step-by-stepoptimizing gas mixture (CO2 and CH4) is required for fundamental understanding of the CVD diamond growth phenomena in such novel process. We show that adding CO2 to the methane/hydrogen gas mixture increases the growth rate up to 4 times and film quality also improves, as dedicated from Raman measurements. Electronic grade diamond films are successfully grown for lower CO2 and methane content in hydrogen and fabricated solution-gated field effect transistors are fully functional.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
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Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů