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Diamond Films Deposited by Oxygen-Enhanced Linear Plasma Chemistry

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F13%3A00211669" target="_blank" >RIV/68407700:21340/13:00211669 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Diamond Films Deposited by Oxygen-Enhanced Linear Plasma Chemistry

  • Original language description

    Diamond thin film growth over large area is mandatory for their industrial uses. Linear antenna microwave CVD process is novel method for growing diamond film at low pressure ranges (below 100 Pa) and low plasma temperature over large areas. Step-by-stepoptimizing gas mixture (CO2 and CH4) is required for fundamental understanding of the CVD diamond growth phenomena in such novel process. We show that adding CO2 to the methane/hydrogen gas mixture increases the growth rate up to 4 times and film quality also improves, as dedicated from Raman measurements. Electronic grade diamond films are successfully grown for lower CO2 and methane content in hydrogen and fabricated solution-gated field effect transistors are fully functional.

  • Czech name

  • Czech description

Classification

  • Type

    O - Miscellaneous

  • CEP classification

    BH - Optics, masers and lasers

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    S - Specificky vyzkum na vysokych skolach

Others

  • Publication year

    2013

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů