MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 micrometers

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F15%3A00224613" target="_blank" >RIV/68407700:21340/15:00224613 - isvavai.cz</a>

Result on the web

<a href="https://doi.org/10.1016/j.jcrysgro.2014.09.053" target="_blank" >https://doi.org/10.1016/j.jcrysgro.2014.09.053</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2014.09.053" target="_blank" >10.1016/j.jcrysgro.2014.09.053</a>

Result language

angličtina

Original language name

MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 micrometers

Original language description

Preparation and properties of InAs/GaAs quantum dots (QDs) prepared by the MOVPE technology covered by GaAsSb strain reducing layer (SRL) with extremely long emission wavelength at 1.8 µm will be presented. Increase of the emission wavelength was achieved by the introduction of GaAsSb SRL with Sb content of about 30% in the solid phase. The high Sb concentration in the SRL causes the preservation of QD size, which is about 15 nm wide at the base and 5 nm high. Increased QD size increases the photoluminescence (PL) wavelength. Furthermore, high content of antimony leads to a creation of type II heterostructure for which a redshift of the PL wavelength and decrease of the PL intensity are typical. Low PL intensity may complicate light emitting applications; however fast separation of carriers in the type II structure is an advantage for detector or solar cell application, especially with the long working wavelength. With respect to the perspective application of this structure, the photocurrent (PC) measurement was chosen as the complementary characterization method. A depression of PC for quantum well wavelength region (approximately 900–1200 nm) was observed for positive bias, while the PC from QDs (over 1200 nm) is not sensitive to the electric field orientation at all. An explanation of this unexpected phenomenon is suggested.

Czech name

—

Czech description

—

Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

—

Continuities

S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2015

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Crystal Growth

ISSN

0022-0248

e-ISSN

1873-5002

Volume of the periodical

414

Issue of the periodical within the volume

Mar

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

5

Pages from-to

167-171

UT code for WoS article

000349602900030

EID of the result in the Scopus database

2-s2.0-84922565864