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Cryogenic Tm:YAP microchip laser

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F16%3A00304692" target="_blank" >RIV/68407700:21340/16:00304692 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1117/12.2228890" target="_blank" >http://dx.doi.org/10.1117/12.2228890</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1117/12.2228890" target="_blank" >10.1117/12.2228890</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Cryogenic Tm:YAP microchip laser

  • Original language description

    The spectral characteristics of laser active media, and thus those of the laser output, are temperature dependent. Specifically, in almost every crystal host, cooling to low temperatures leads to better heat removal, a higher efficiency and output power, and a reduced lasing threshold. Tm-ion doped lasers have an emission wavelength around 2 mu m and are important in medicine for soft tissue cutting and hemostasis, as well as in LIDAR or atmosphere sensing technology. This paper presents the performance-temperature dependency of a 4 at. % doped Tm:YAP microchip. During the experiment the Tm:YAP crystal was placed inside an evacuated liquid nitrogen cryostat on a cooling finger. As its temperature was varied from 80 K to 340 K, changes were observed in the absorption spectrum, ranging from 750 nm to 2000 nm and in the fluorescence spectrum from 1600 nm to 2050 nm. Fluorescence lifetime was seen to rise and fall with decreasing temperature. The laser was pumped by a 792 nm laser diode and at 80 K the maximum output peak power of the laser was 4.6 W with 23 % slope efficiency and 0.6 W threshold, compared to 2.4 W output peak power, 13 % slope efficiency and 3.3 W threshold when at 340 K. The laser emission wavelength changed from 1883 nm to 1993 nm for 80 K and 300 K, respectively.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GAP102%2F12%2F0320" target="_blank" >GAP102/12/0320: Mid-infrared solid-state lasers</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2016

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Proc. SPIE 9893, Laser Sources and Applications III

  • ISBN

    978-1-5106-0138-3

  • ISSN

    0277-786X

  • e-ISSN

  • Number of pages

    8

  • Pages from-to

  • Publisher name

    SPIE

  • Place of publication

    Bellingham (stát Washington)

  • Event location

    Brusel

  • Event date

    Apr 3, 2016

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article

    000381704500019