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Influence of substrate material on spectral properties and thermal quenching of photoluminescence of silicon vacancy colour centres in diamond thin films

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F17%3A00317075" target="_blank" >RIV/68407700:21340/17:00317075 - isvavai.cz</a>

  • Alternative codes found

    RIV/68378271:_____/17:00481233

  • Result on the web

    <a href="https://doi.org/10.1515/jee-2017-0048" target="_blank" >https://doi.org/10.1515/jee-2017-0048</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1515/jee-2017-0048" target="_blank" >10.1515/jee-2017-0048</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Influence of substrate material on spectral properties and thermal quenching of photoluminescence of silicon vacancy colour centres in diamond thin films

  • Original language description

    Nanocrystalline diamond films with bright photoluminescence of silicon-vacancy colour centres have been grown using a microwave plasma enhanced CVD technique. The influence of substrate material (quartz, Al2O3 , Mo and Si) on a reproducible fabrication of diamond thin films with Si-V optical centres is presented. Film quality and morphology are characterized by Raman spectroscopy and SEM technique. SEM shows well faceted diamond grains with sizes from 170 to 300 nm. The diamond peak is confirmed in Raman spectra for all samples. In the case of the quartz substrate, a redshift of the diamond peak is observed (~ 3.5 cm-1 ) due to tension in the diamond film. The steady-state photoluminescence intensity was measured in the temperature range from 11 K to 300 K. All spectra consist of a broad emission band with a maximum near 600 nm and of a sharp zero phonon line in the vicinity of 738 nm corresponding to Si-V centres that is accompanied with a phonon sideband peaking at 757 nm. Activation energies for the thermal quenching of Si-V centre photoluminescence were determined and the effect of the substrate on photoluminescence properties is discussed too.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    S - Specificky vyzkum na vysokych skolach

Others

  • Publication year

    2017

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Electrical Engineering

  • ISSN

    1335-3632

  • e-ISSN

    1339-309X

  • Volume of the periodical

    68

  • Issue of the periodical within the volume

    7

  • Country of publishing house

    PL - POLAND

  • Number of pages

    7

  • Pages from-to

    3-9

  • UT code for WoS article

    000423262300002

  • EID of the result in the Scopus database

    2-s2.0-85040813214