A study of single event effects induced by heavy charged particles in 180 nm SoI technology
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F18%3A00334359" target="_blank" >RIV/68407700:21340/18:00334359 - isvavai.cz</a>
Result on the web
<a href="https://ieeexplore.ieee.org/document/8824677" target="_blank" >https://ieeexplore.ieee.org/document/8824677</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/NSSMIC.2018.8824677" target="_blank" >10.1109/NSSMIC.2018.8824677</a>
Alternative languages
Result language
angličtina
Original language name
A study of single event effects induced by heavy charged particles in 180 nm SoI technology
Original language description
This article presents a measurement of the SEU bit-flip cross section of the X-CHIP-03 ASIC manufactured in a 180 nm PDSoI technology. The measurements were performed using a shift register in the X-CHIP-03 ASIC made with custom D flip-flops. The bit-flip cross sections and ASIC power consumption measurements were performed while irradiating the device with Ne, Ar and Xe ions, provided by the U400M isochronous cyclotron at the FLNR laboratory at JINR.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
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OECD FORD branch
10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)
Result continuities
Project
<a href="/en/project/EF16_013%2F0001569" target="_blank" >EF16_013/0001569: Brookhaven National Laboratory - participation of the Czech Republic</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)
ISBN
978-1-5386-8494-8
ISSN
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e-ISSN
2577-0829
Number of pages
4
Pages from-to
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Publisher name
Institute of Electrical and Electronics Engineers, Inc.
Place of publication
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Event location
Sydney
Event date
Nov 10, 2018
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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