TID and SEU testing of the novel X-CHIP-03 monolithic pixel detector

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F20%3A00538009" target="_blank" >RIV/61389005:_____/20:00538009 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/20:00538009 RIV/44555601:13440/20:43895458 RIV/68407700:21340/20:00338550
Result on the web
<a href="https://doi.org/10.1088/1748-0221/15/01/C01043" target="_blank" >https://doi.org/10.1088/1748-0221/15/01/C01043</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1748-0221/15/01/C01043" target="_blank" >10.1088/1748-0221/15/01/C01043</a>

Result language
angličtina
Original language name
TID and SEU testing of the novel X-CHIP-03 monolithic pixel detector
Original language description
We present a SEE and TID effect study of the novel monolithic pixel detector, X-CHIP-03, manufactured in a 180 nm SOI technology. The SEU cross section of the custom D flip-flops in the X-CHIP-03 ASIC has been evaluated using accelerated ions with LET ranging from 0.45 to 69 MeVċcm2ċmg−1. The global TID response of the X-CHIP-03 has been evaluated at a dose rate of 16.2 Gyċmin−1. The direct I-V measurements of transistor properties were made under identical radiation conditions using the predecessor X-CHIP-02 ASIC manufactured in the same technology, which contains the transistor testing matrices for TID measurements.n
Czech name
—
Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10304 - Nuclear physics

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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