A comparative study of the TID radiation effects on ASICs manufactured in 180 nm commercial technologies
Result description
The presented study compares the effects of ionizing radiation on circuit structures manufactured in a 180 nm bulk CMOS and 180 nm SoI MOS technology. Ahigh-flux Co-60 medical radiation source with a dose rate of 460 Gy.min(-1) was used. The specimens under irradiation were placed in a Pb/Al enclosure providing an approximate electron equilibrium. Besides the analog and digital circuits, the ASICs also contain transistor test structures for direct study of irradiation effects upon electronics. The integral characteristics of current consumption, shifts in transistor threshold voltage and leakage current increase observations have been made. The SoI technology was shown to be several orders of magnitude more sensitive to TID effects, but during irradiation, its properties had a tendency to return to normal.
Keywords
radiation damage to electronic componentsradiation-hard detectorsradiation-hard electronicssolid state detectors
The result's identifiers
Result code in IS VaVaI
Alternative codes found
RIV/68407700:21340/18:00327024
Result on the web
DOI - Digital Object Identifier
Alternative languages
Result language
angličtina
Original language name
A comparative study of the TID radiation effects on ASICs manufactured in 180 nm commercial technologies
Original language description
The presented study compares the effects of ionizing radiation on circuit structures manufactured in a 180 nm bulk CMOS and 180 nm SoI MOS technology. Ahigh-flux Co-60 medical radiation source with a dose rate of 460 Gy.min(-1) was used. The specimens under irradiation were placed in a Pb/Al enclosure providing an approximate electron equilibrium. Besides the analog and digital circuits, the ASICs also contain transistor test structures for direct study of irradiation effects upon electronics. The integral characteristics of current consumption, shifts in transistor threshold voltage and leakage current increase observations have been made. The SoI technology was shown to be several orders of magnitude more sensitive to TID effects, but during irradiation, its properties had a tendency to return to normal.
Czech name
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Czech description
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Classification
Type
Jimp - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10303 - Particles and field physics
Result continuities
Project
—
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Instrumentation
ISSN
1748-0221
e-ISSN
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Volume of the periodical
13
Issue of the periodical within the volume
12
Country of publishing house
GB - UNITED KINGDOM
Number of pages
10
Pages from-to
1-10
UT code for WoS article
000452462800002
EID of the result in the Scopus database
2-s2.0-85059889718
Basic information
Result type
Jimp - Article in a specialist periodical, which is included in the Web of Science database
OECD FORD
Particles and field physics
Year of implementation
2018