Er:YAG microchip for lasing in spectral range 2.94 μm and gain switching generation
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F20%3A00344723" target="_blank" >RIV/68407700:21340/20:00344723 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1364/EUVXRAY.2020.JW1A.25" target="_blank" >https://doi.org/10.1364/EUVXRAY.2020.JW1A.25</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1364/EUVXRAY.2020.JW1A.25" target="_blank" >10.1364/EUVXRAY.2020.JW1A.25</a>
Alternative languages
Result language
angličtina
Original language name
Er:YAG microchip for lasing in spectral range 2.94 μm and gain switching generation
Original language description
Highly doped Er:YAG microchip was prepared to make laser resonator compact and generate short pulses in gain switching regime. Pulse duration 306 ns with peak power 7 W and repetition rate 400 Hz were reached.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
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OECD FORD branch
10306 - Optics (including laser optics and quantum optics)
Result continuities
Project
<a href="/en/project/GA18-11954S" target="_blank" >GA18-11954S: Optimization of the solid-state laser active materials for spectral range from near- up to mid-infrared</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů