Thin Film Limit Correction Method to the Surface Defective Layer in Low Absorption Spectroscopy

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21460%2F15%3A00241298" target="_blank" >RIV/68407700:21460/15:00241298 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1166/asem.2015.1699" target="_blank" >http://dx.doi.org/10.1166/asem.2015.1699</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1166/asem.2015.1699" target="_blank" >10.1166/asem.2015.1699</a>

Result language

angličtina

Original language name

Thin Film Limit Correction Method to the Surface Defective Layer in Low Absorption Spectroscopy

Original language description

We derive the so-called thin-film limit correction method to the surface defective layer in a low absorption spectroscopy as a novel approach to formulae for transmittance (T ), reflectance (R) and absorptance (A) in highly versatile and accurate form. We draw attention to two remarkable consequences of the thin-film limit: (i) The optical properties depend on the product of the absorption coefficient, thickness and refraction index. (ii) The absorptance strongly depends on the index of refraction of the surrounding media. Based on these assumptions a new method is presented that allows direct evaluation of ultrathin surface defective layer absorptance. This presents a direct and elegant way avoiding complex evaluation of surface defective layer. Finally, we perform experimental verification on hydrogenated amorphous silicon (a-Si:H) thin films and we show that the optical absorption of the double layer of undoped thin film layer coated with the ultrathin doped layer is higher then the

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Publication year

2015

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Advanced Science, Engineering and Medicine

ISSN

2164-6635

e-ISSN

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Volume of the periodical

7

Issue of the periodical within the volume

4

Country of publishing house

US - UNITED STATES

Number of pages

4

Pages from-to

343-346

UT code for WoS article

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EID of the result in the Scopus database

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