Thin-film limit formalism applied to surface defect absorption

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00440228" target="_blank" >RIV/68378271:_____/14:00440228 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21230/14:00225012
Result on the web
<a href="http://dx.doi.org/10.1364/OE.22.031466" target="_blank" >http://dx.doi.org/10.1364/OE.22.031466</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1364/OE.22.031466" target="_blank" >10.1364/OE.22.031466</a>

Result language
angličtina
Original language name
Thin-film limit formalism applied to surface defect absorption
Original language description
The thin-film limit is derived by a nonconventional approach and equations for transmittance, reflectance and absorptance are presented in highly versatile and accurate form. In the thin-film limit the optical properties do not depend on the absorption coefficient, thickness and refractive index individually, but only on their product. We show that this formalism is applicable to the problem of ultrathin defective layer e.g. on a top of a layer of amorphous silicon. We develop a new method of direct evaluation of the surface defective layer and the bulk defects. Applying this method to amorphous silicon on glass, we show that the surface defective layer differs from bulk amorphous silicon in terms of light soaking.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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