Surface and ultrathin-layer absorptance spectroscopy for solar cells

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00439340" target="_blank" >RIV/68378271:_____/14:00439340 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.egypro.2014.12.342" target="_blank" >http://dx.doi.org/10.1016/j.egypro.2014.12.342</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.egypro.2014.12.342" target="_blank" >10.1016/j.egypro.2014.12.342</a>

Result language
angličtina
Original language name
Surface and ultrathin-layer absorptance spectroscopy for solar cells
Original language description
The methods Photothermal Deflection Spectroscopy and Fourier Transform Photocurrent Spectroscopy were modified to measure defect absorptance at the semiconductor surfaces and in ultra-thin layers. We present a method allowing us to routinely probe the hydrogen content and microstructure of ultrathin layers on top of crystalline wafer. We study the effects of sample storage, annealing and light soaking on defect density and the hydrogen content. Surface-defect layers, present on 350 nm thick hydrogenatedamorphous silicon, were studied and correlated to behavior of only 10 nm thick films of the same material. Interestingly, these distinct structures all exhibited similar behavior: loss of hydrogen due to <200°C annealing, practically no increase of defect density by light soaking, reduction of defect density just by storage in air. The observed behavior of the ultrathin layers is diametrically different from the usual behavior of bulk hydrogenated amorphous silicon.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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