Subbandgap absorption spectroscopy of thin film photovoltaic materials

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00480289" target="_blank" >RIV/68378271:_____/16:00480289 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Subbandgap absorption spectroscopy of thin film photovoltaic materials
Original language description
Recent advance in the hydrogenated amorphous silicon technology and the Fourier-transform Photocurrent Spectroscopy are reviewed, including the problem of parasitic absorptance due to the surface states. A new practice of the absolute scaling of the subbandgap photocurrent signal measured on solar cells is proposed, allowing absolute determination of bulk defect density in ppm. This approach is verified by ray tracing optical simulations. In order to give practical interpretation of defect concentration in terms of device performance, a series of hydrogenated amorphous silicon solar cells of different thickness was analyzed at different states of light soaking degradation. A map of maximum attainable voltage for given bandgap and combination of thickness and defect density is presented. An interesting fundamental rule is observed: the slope of the dependence of the voltage on the logarithm of the defect density corresponds to the Urbach energy.n
Czech name
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Czech description
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Project
<a href="/en/project/LD14011" target="_blank" >LD14011: Electronic and optical properties of hybrid nanostructures</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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