Subbandgap absorption spectroscopy of solar cell materials
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F15%3A00236705" target="_blank" >RIV/68407700:21230/15:00236705 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Subbandgap absorption spectroscopy of solar cell materials
Original language description
Recent advance in the hydrogenated amorphous silicon technology and the Fourier-transform Photocurrent Spec-troscopy are reviewed, including the problem of parasitic absorptance of the surface states. A new way of the abso-lute scaling of the subbandgapphotocurrent signal meas-ured on solar cells is proposed, allowing absolute deter-mination of bulk defect density in ppm. This approach is verified by ray tracing optical simulations. In order to give practical interpretation of defect concentration in terms of device performance, a series of hydrogenated amorphous silicon solar cells of different thickness was analyzed at different states of light soaking degradation. A map of maximum attainable voltage for given bandgap and combination of thickness and defect density is shown.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů