A single layer 3D tracking semiconductor detector
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21670%2F19%3A00342165" target="_blank" >RIV/68407700:21670/19:00342165 - isvavai.cz</a>
Result on the web
<a href="https://worldwide.espacenet.com/patent/search/family/044905976/publication/EP2758806A1?q=pn%3DEP2758806A1%3F" target="_blank" >https://worldwide.espacenet.com/patent/search/family/044905976/publication/EP2758806A1?q=pn%3DEP2758806A1%3F</a>
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
A single layer 3D tracking semiconductor detector
Original language description
The present invention relates to a pixel detector (10), comprising a semiconductor sensor layer (12), in which charges can be generated upon interaction with particles to be detected. The semiconductor layer defines an X-Y-plane and has a thickness extending in Z-direction. The detector further comprises a read-out electronics layer (14) connected to said semiconductor layer (12), said read-out electronics layer (14) comprising an array of read-out circuits (20) for detecting signals indicative of charges generated in a corresponding volume of said semiconductor sensor layer (12). The neighbouring read-out circuits (20) are connected by a relative timing circuit configured to determine time difference information between signals detected at said neighbouring read-out circuits (20). The time difference information is indicative of a difference in the Z-components of the locations of charge generations in the corresponding neighbouring sensor volumes caused by a particle trajectory that is inclined with respect to the X-Y-plane. ### The patent is exploited by its owner.
Czech name
—
Czech description
—
Classification
Type
P - Patent
CEP classification
—
OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
—
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Patent/design ID
EP2758806
Publisher
EPO_1 -
Publisher name
European Patent Office
Place of publication
Munich, The Hague, Berlin, Vienna, Brussels
Publication country
—
Date of acceptance
Jun 12, 2019
Owner name
CERN - European Organisation for Nuclear Research; Friedrich-Alexander-Universitat Erlangen-Nurnberg; Czech technical University in Prague
Method of use
A - Výsledek využívá pouze poskytovatel
Usage type
P - Využití výsledku jiným subjektem je v některých případech možné bez nabytí licence