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A single layer 3D tracking semiconductor detector

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21670%2F19%3A00342165" target="_blank" >RIV/68407700:21670/19:00342165 - isvavai.cz</a>

  • Result on the web

    <a href="https://worldwide.espacenet.com/patent/search/family/044905976/publication/EP2758806A1?q=pn%3DEP2758806A1%3F" target="_blank" >https://worldwide.espacenet.com/patent/search/family/044905976/publication/EP2758806A1?q=pn%3DEP2758806A1%3F</a>

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    A single layer 3D tracking semiconductor detector

  • Original language description

    The present invention relates to a pixel detector (10), comprising a semiconductor sensor layer (12), in which charges can be generated upon interaction with particles to be detected. The semiconductor layer defines an X-Y-plane and has a thickness extending in Z-direction. The detector further comprises a read-out electronics layer (14) connected to said semiconductor layer (12), said read-out electronics layer (14) comprising an array of read-out circuits (20) for detecting signals indicative of charges generated in a corresponding volume of said semiconductor sensor layer (12). The neighbouring read-out circuits (20) are connected by a relative timing circuit configured to determine time difference information between signals detected at said neighbouring read-out circuits (20). The time difference information is indicative of a difference in the Z-components of the locations of charge generations in the corresponding neighbouring sensor volumes caused by a particle trajectory that is inclined with respect to the X-Y-plane. ### The patent is exploited by its owner.

  • Czech name

  • Czech description

Classification

  • Type

    P - Patent

  • CEP classification

  • OECD FORD branch

    20201 - Electrical and electronic engineering

Result continuities

  • Project

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2019

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Patent/design ID

    EP2758806

  • Publisher

    EPO_1 -

  • Publisher name

    European Patent Office

  • Place of publication

    Munich, The Hague, Berlin, Vienna, Brussels

  • Publication country

  • Date of acceptance

    Jun 12, 2019

  • Owner name

    CERN - European Organisation for Nuclear Research; Friedrich-Alexander-Universitat Erlangen-Nurnberg; Czech technical University in Prague

  • Method of use

    A - Výsledek využívá pouze poskytovatel

  • Usage type

    P - Využití výsledku jiným subjektem je v některých případech možné bez nabytí licence