Single layer 3D tracking semiconductor detector

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21670%2F16%3A00321468" target="_blank" >RIV/68407700:21670/16:00321468 - isvavai.cz</a>
Result on the web
<a href="http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=/netahtml/PTO/search-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN/9297912" target="_blank" >http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=/netahtml/PTO/search-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN/9297912</a>
DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Single layer 3D tracking semiconductor detector
Original language description
The invention relates to a pixel detector, comprising a semiconductor sensor layer, in which charges can be generated upon interaction with particles to be detected. The semiconductor layer defines an X-Y plane and has a thickness extending in Z-direction. ### The patent is exploited: at least one license has been sold. The patent is exploited by its owner.
Czech name
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Czech description
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Patent/design ID
US 9,297,912 B2
Publisher
US001 -
Publisher name
United States Patent and Trademark Office (USPTO)
Place of publication
Alexandria
Publication country
US - UNITED STATES
Date of acceptance
Mar 29, 2016
Owner name
CERN-European Organisation for Nuclear Research;Friedrich-Alexander-Universitat Erlange-Nurnberg;Czech technical University in Prague
Method of use
B - Výsledek je využíván orgány státní nebo veřejné správy
Usage type
A - K využití výsledku jiným subjektem je vždy nutné nabytí licence

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