Investigation of the gamma radiation resistance of MAPD-3NK and MPPC-S12572-10P SiPMs

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21670%2F25%3A00385669" target="_blank" >RIV/68407700:21670/25:00385669 - isvavai.cz</a>
Alternative codes found
RIV/49777513:23220/25:43975515
Result on the web
<a href="https://doi.org/10.1016/j.radmeas.2025.107422" target="_blank" >https://doi.org/10.1016/j.radmeas.2025.107422</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.radmeas.2025.107422" target="_blank" >10.1016/j.radmeas.2025.107422</a>

Result language
angličtina
Original language name
Investigation of the gamma radiation resistance of MAPD-3NK and MPPC-S12572-10P SiPMs
Original language description
In this paper, we investigate the physical properties of the MPPC-S12572-10P and MAPD-3NK silicon photomultipliers (SiPMs) operating in Geiger mode with both deep-buried pixels and surface pixel structure under the influence of gamma radiation with an average energy of 1.25 MeV. Both types of photodiodes were irradiated with doses of 10 kGy, 40 kGy and 100 kGy. Changes in the dark current, capacitance, photosignal amplitude and operating voltage of the irradiated photodiodes were studied.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10304 - Nuclear physics

Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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