Wetting of Si and SiO2 Thin Layer

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F70883521%3A28110%2F02%3A63500502" target="_blank" >RIV/70883521:28110/02:63500502 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Wetting of Si and SiO2 Thin Layer

Original language description

There was studied the process of water and selected organic liquids adhesion on the surface of epitaxial Si and pyrolytic SiO2 in the temperature range from 20 to 50 oC. The values of dispersion sd(s) and polar sp(s) components of the density of the surface Gibbs energy s(s) of Si and SiO2 layers were determined by the method based on measuring the angle of wetting j. It has been found that the polar component of interaction regulates the density of the surface Gibbs energy of the above substrates.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

CF - Physical chemistry and theoretical chemistry

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2002

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Silicon 2002, The 8th scientific and Business Conference

ISBN

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ISSN

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e-ISSN

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Number of pages

5

Pages from-to

46-50

Publisher name

TECON Scientific, s.r.o.

Place of publication

Rožnov pod Radhoštěm

Event location

Rožnov pod Radhoštěm

Event date

Nov 5, 2002

Type of event by nationality

EUR - Evropská akce

UT code for WoS article

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