Kelvin Probe Force Microscopy and Calculation of Charge Transport in a Graphene/Silicon Dioxide System at Different Relative Humidity
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F70883521%3A28110%2F18%3A63520423" target="_blank" >RIV/70883521:28110/18:63520423 - isvavai.cz</a>
Alternative codes found
RIV/00216305:26620/18:PU127833 RIV/68378271:_____/18:00511229
Result on the web
<a href="http://dx.doi.org/10.1021/acsami.7b18041" target="_blank" >http://dx.doi.org/10.1021/acsami.7b18041</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acsami.7b18041" target="_blank" >10.1021/acsami.7b18041</a>
Alternative languages
Result language
angličtina
Original language name
Kelvin Probe Force Microscopy and Calculation of Charge Transport in a Graphene/Silicon Dioxide System at Different Relative Humidity
Original language description
The article shows how the dynamic mapping of surface potential (SP) measured by Kelvin probe force microscopy (KPFM) in combination with calculation by a diffusion-like equation and the theory based on the Brunauer-Emmett-Teller (BET) model of water condensation and electron hopping can provide the information concerning the resistivity of low conductive surfaces and their water coverage. This is enabled by a study of charge transport between isolated and grounded graphene sheets on a silicon dioxide surface at different relative humidity (RH) with regard to the use of graphene in ambient electronic circuits and especially in sensors. In the experimental part, the chemical vapor-deposited graphene is precisely patterned by the mechanical atomic force microscopy (AFM) lithography and the charge transport is studied through a surface potential evolution measured by KPFM. In the computational part, a quantitative model based on solving the diffusion-like equation for the charge transport is used to fit the experimental data and thus to find the SiO2 surface resistivity ranging from 107 to 1010 Ω and exponentially decreasing with the RH increase. Such a behavior is explained using the formation of water layers predicted by the BET adsorption theory and electron-hopping theory that for the SiO2 surface patterned by AFM predicts a high water coverage even at low RHs.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
N - Vyzkumna aktivita podporovana z neverejnych zdroju
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
ACS Applied Materials and Interfaces
ISSN
1944-8244
e-ISSN
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Volume of the periodical
10
Issue of the periodical within the volume
14
Country of publishing house
US - UNITED STATES
Number of pages
8
Pages from-to
11987-11994
UT code for WoS article
000430156000068
EID of the result in the Scopus database
2-s2.0-85045341032