Bandgap engineering of ZnO nanoparticles for polymer active layers in leds

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F70883521%3A28110%2F18%3A63521373" target="_blank" >RIV/70883521:28110/18:63521373 - isvavai.cz</a>
Alternative codes found
RIV/70883521:28610/18:63521373
Result on the web
<a href="http://cps.utb.cz/images/aktuality/Sborn%C3%ADk_PLASTKO_2018.pdf" target="_blank" >http://cps.utb.cz/images/aktuality/Sborn%C3%ADk_PLASTKO_2018.pdf</a>
DOI - Digital Object Identifier
—

Result language
angličtina
Original language name
Bandgap engineering of ZnO nanoparticles for polymer active layers in leds
Original language description
A study on the influence of the electronic structure of ZnO nanoparticles incorporated in the active polymer MEH-PPV layer in polymer LEDs on their luminance performance is presented. Embedding of Since ZnO is an n-type semiconductor, the nanoparticles made from this material extremely increase the electroluminescence intensity of polymer LEDs due to their contribution to the charge carrier balance in the active layer. On the other hand, addition of p-doped ZnO nanoparticles has less pronounced effect on the electroluminescence, but it reduces opening bias of the diode and decreases thus the power to reach required luminance of the device.
Czech name
—
Czech description
—

Project
<a href="/en/project/LO1504" target="_blank" >LO1504: Centre of Polymer Systems Plus</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Similar results(10)