The effect of scratching direction in AFM nanolithography
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F70883521%3A28140%2F17%3A63517540" target="_blank" >RIV/70883521:28140/17:63517540 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1109/ICIST.2017.7926779" target="_blank" >http://dx.doi.org/10.1109/ICIST.2017.7926779</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/ICIST.2017.7926779" target="_blank" >10.1109/ICIST.2017.7926779</a>
Alternative languages
Result language
angličtina
Original language name
The effect of scratching direction in AFM nanolithography
Original language description
In this paper, we investigated the effect of scratching direction in AFM scratching. The understanding of this effect is one of the key factors in the patterning process. In our experiment, several testing grooves were engraved in all four basic directions (forward, backward, right and left) on polycarbonate substrate using Si probe. Both the fabrication and subsequent characterization were performed using the identical atomic force microscope. Our results were compared to previous reports. It was found that scratching in the backward direction is the most suitable for the common usage.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
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OECD FORD branch
21002 - Nano-processes (applications on nano-scale); (biomaterials to be 2.9)
Result continuities
Project
<a href="/en/project/LO1303" target="_blank" >LO1303: Promoting sustainability and development of the Centre for Security, Information and Advanced Technologies (CEBIA-Tech)</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
2017 SEVENTH INTERNATIONAL CONFERENCE ON INFORMATION SCIENCE AND TECHNOLOGY (ICIST2017)
ISBN
978-1-5090-5400-8
ISSN
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e-ISSN
neuvedeno
Number of pages
4
Pages from-to
331-334
Publisher name
IEEE
Place of publication
New York
Event location
Da Nang
Event date
Apr 16, 2017
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000403402600054