Atomic Layer Deposition of MoSe2 Using New Selenium Precursors

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F75081431%3A_____%2F20%3A00001777" target="_blank" >RIV/75081431:_____/20:00001777 - isvavai.cz</a>

Alternative codes found

RIV/00216275:25310/20:39916366 RIV/00216224:14310/20:00115534 RIV/00216305:26620/20:PU136516

Result on the web

<a href="https://www.sciencedirect.com/science/article/pii/S2452262720300155?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S2452262720300155?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.flatc.2020.100166" target="_blank" >10.1016/j.flatc.2020.100166</a>

Result language

angličtina

Original language name

Atomic Layer Deposition of MoSe2 Using New Selenium Precursors

Original language description

Among the emerging 2D materials, transition metal chalcogenides are particularly encouraging as alternative semiconducting graphene-like nanomaterial. Recently, 2D MoSe2 has been gaining interest due to its intriguing properties, in many ways exceeding those of the extensively studied MoS2. The deposition of 2D nanomaterials in a conformal and uniform fashion on complex-shaped nanostructures is highly appealing but only achievable by atomic layer deposition (ALD). Unfortunately, the synthesis of MoSe2 by ALD is hindered by a current substantial lack of feasible Se precursors. In this work, we synthesized a set of alkysilyl (R3Si)2Se and alkylstannyl (R3Sn)2Se compounds and studied their suitability as Se ALD precursors. Thus, ALD processes carried out using MoCl5 as Mo precursor counterpart were followed by an extensive characterization of the as deposited material. The corresponding results revealed successful deposition of MoSe2 nanostructures on substrates of different nature with dominant out-of-plane orientation. Eventually, the growth evolution of the MoSe2 during the very early ALD stage was studied and described, displaying concomitant in-plane and out-of-plane MoSe2 growth. All in all, a set of suitable Se precursors presented herein paves the way for the deposition of 2D MoSe2 with all the own ALD benefits and allow the further study of its promising properties in a wide number of applications

Czech name

—

Czech description

—

Type

J_SC - Article in a specialist periodical, which is included in the SCOPUS database

CEP classification

—

OECD FORD branch

10401 - Organic chemistry

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2020

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

FlatChem

ISSN

2452-2627

e-ISSN

—

Volume of the periodical

21

Issue of the periodical within the volume

Květen

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

24

Pages from-to

1-24

UT code for WoS article

000540780300005

EID of the result in the Scopus database

2-s2.0-85084140980