Filtry
Vertical transport in type-II Heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field
electrons and two-dimensional QW electrons under quantum limit conditions for bulk electrons (B > 5 T). The electron concentrations in the substrate and InAs QW substrate into the InAs QW through the 2D electron states of ...
Condensed matter physics (including formerly solid state physics, supercond.)
- 2017 •
- Jimp •
- Odkaz
Rok uplatnění
Jimp - Článek v periodiku v databázi Web of Science
Výsledek na webu
Increasing scintillator active region thickness by InGaN/GaN QW number
Luminescence results of InGaN/GaN multiple quantum well (QW) structures with number of QWs from 10 to 60 are studied in this work.The aim is to optimize a thickness of active region for maximization of the intensity of faster blue <...
Condensed matter physics (including formerly solid state physics, supercond.)
- 2018 •
- O
Rok uplatnění
O - Ostatní výsledky
On the correlations between the excitonic luminescence efficiency and the QW numbers in multiple InGaN/GaN QW structure
(QW) structures with different numbers of QWs. Structures are designed for scintillating applications, where large QW number covering particle penetration depth to increase the intensity of fast excitonic QW emiss...
Condensed matter physics (including formerly solid state physics, supercond.)
- 2017 •
- Jimp •
- Odkaz
Rok uplatnění
Jimp - Článek v periodiku v databázi Web of Science
Výsledek na webu
Luminescence red shift of InGaN/GaN heterostructures by enlargement of V-pits
quantum wells (QWs) from 10 to 60 were prepared to achieve a thick active MQW layer. The increasing QWs number leads to accumulation of strain in InGaN/GaN layers and opening’ semipolar QWs and c-plane QWs is incr...
Condensed matter physics (including formerly solid state physics, supercond.)
- 2019 •
- O
Rok uplatnění
O - Ostatní výsledky
Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface
This work concentrates on the technology procedure for growth of upper QW interfaces in InGaN/GaN QW structure when different temperature for QW and barrier after QW formation was not interrupted, but immediately c...
Condensed matter physics (including formerly solid state physics, supercond.)
- 2019 •
- Jimp •
- Odkaz
Rok uplatnění
Jimp - Článek v periodiku v databázi Web of Science
Výsledek na webu
Exenatide QW
Exenatide QW is a depot form, in which the molecule is incorporated in microspheres of exenatide, from which, after subcutaneous administration of their own effective substance is released very slowly....
FR - Farmakologie a lékárnická chemie
- 2012 •
- Jx •
- Odkaz
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Výsledek na webu
LED-like structures with high temperature superlinear luminescence
The superlinear electroluminescence (SLEL) of the structures based on AlSb/InAsSb/AlSb deep quantum wells (QWs) grown by MOVPE on n-GaSb:Te substrates is presented. Two different Sb compositions were grown. Dependence QW we...
BM - Fyzika pevných látek a magnetismus
- 2016 •
- O
Rok uplatnění
O - Ostatní výsledky
Influence of Different InGaN/(In)GaN Growth Modes on Indium Incorporation and Quality of Layers
In our work we will show how to significantly increase the In content in QWs without lowering the QW growth temperature. We have studied different growth modes of InGaN/(In)GaN heterostructure while the QW growth parameters...
Condensed matter physics (including formerly solid state physics, supercond.)
- 2018 •
- O
Rok uplatnění
O - Ostatní výsledky
Photoluminescence of InGaN/GaN MQW structures – technological aspects
of scintillator structures with different number of QWs and different growth rate of QWs were measured. We show that the growth rate and QW number are very important parameters to increase the QW excitonic lumines...
BM - Fyzika pevných látek a magnetismus
- 2016 •
- D
Rok uplatnění
D - Stať ve sborníku
Advancement toward ultra- thick and bright InGaN/ GaN structures with a high number of QWs
well (QW) numbers ranging from 10 to 60 are described and discussed. It is shown that with increased QW number, the luminescence efficiency of the whole structure increases due to be in the range from 200 to 300 nm, which is obtain...
Chemical sciences
- 2019 •
- Jimp •
- Odkaz
Rok uplatnění
Jimp - Článek v periodiku v databázi Web of Science
Výsledek na webu
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