Study of the development of defects in Si PIN diodes exposed to 23 GeV/c protons

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11110%2F15%3A10296032" target="_blank" >RIV/00216208:11110/15:10296032 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21670/15:00237043 RIV/68407700:21220/15:00237043
Result on the web
<a href="http://dx.doi.org/10.1088/1748-0221/10/03/P03021" target="_blank" >http://dx.doi.org/10.1088/1748-0221/10/03/P03021</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1748-0221/10/03/P03021" target="_blank" >10.1088/1748-0221/10/03/P03021</a>

Result language
angličtina
Original language name
Study of the development of defects in Si PIN diodes exposed to 23 GeV/c protons
Original language description
Studying the development of crystallographic defects in PIN diodes is the focus of the RD-50 (CERN) research project. The study was carried out on Si PIN diodes manufactured and used in the Czech Republic. The Si PIN diodes were irradiated with 23 GeV/cprotons at doses ranging from 0.5 to 43 Gy. The Si PIN diodes were calibrated in a 23 GeV/c proton source [1], and the energy traps of the defects produced were measured by the DLTS method. The IV characteristics and the parameters of the defects were studied. The 23 GeV/c protons produce typical crystallographic defects and, at higher doses, bring about their regrouping thus giving rise to a new generation of defects. Defects are classified by their energy levels in the forbidden band from the conduction band. The mechanism influencing the parameters of the defects is discussed. The study of defects in silicon is important for silicon-based electronic elements used in cosmic research because of their effects on the operability and reli
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BG - Nuclear, atomic and molecular physics, accelerators
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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