Defects in N+ ion-implanted ZnO single crystals studied by positron annihilation and Hall effect
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F07%3A10084088" target="_blank" >RIV/00216208:11320/07:10084088 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Defects in N+ ion-implanted ZnO single crystals studied by positron annihilation and Hall effect
Original language description
High quality ZnO single crystals of dimensions 10 x 10 x 0.5 mm(3), grown by a hydrothermal approach, have been implanted by 40 keV N+ ions to a fluence of 1 x 10(15) cm(-2) at room temperature. Their properties revealed by positron annihilation and Halleffect measurements are given in the as-grown and as-irradiated states, and after post-implantation annealing in an oxygen ambient at 200 degrees C and 500 degrees C.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2007
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physica Status Solidi. C. Solid State Physics
ISSN
1610-1634
e-ISSN
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Volume of the periodical
4
Issue of the periodical within the volume
10
Country of publishing house
US - UNITED STATES
Number of pages
4
Pages from-to
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UT code for WoS article
000250716700050
EID of the result in the Scopus database
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