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Defects in N+ ion-implanted ZnO single crystals studied by positron annihilation and Hall effect

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F07%3A10084088" target="_blank" >RIV/00216208:11320/07:10084088 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Defects in N+ ion-implanted ZnO single crystals studied by positron annihilation and Hall effect

  • Original language description

    High quality ZnO single crystals of dimensions 10 x 10 x 0.5 mm(3), grown by a hydrothermal approach, have been implanted by 40 keV N+ ions to a fluence of 1 x 10(15) cm(-2) at room temperature. Their properties revealed by positron annihilation and Halleffect measurements are given in the as-grown and as-irradiated states, and after post-implantation annealing in an oxygen ambient at 200 degrees C and 500 degrees C.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2007

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Physica Status Solidi. C. Solid State Physics

  • ISSN

    1610-1634

  • e-ISSN

  • Volume of the periodical

    4

  • Issue of the periodical within the volume

    10

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    4

  • Pages from-to

  • UT code for WoS article

    000250716700050

  • EID of the result in the Scopus database