Magnetism in GaN layers implanted by La, Gd, Dy and Lu

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F11%3A00365408" target="_blank" >RIV/68378271:_____/11:00365408 - isvavai.cz</a>
Alternative codes found
RIV/61389005:_____/11:00365408 RIV/60461373:22310/11:43892063
Result on the web
<a href="http://dx.doi.org/10.1016/j.tsf.2011.04.110" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2011.04.110</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.tsf.2011.04.110" target="_blank" >10.1016/j.tsf.2011.04.110</a>

Result language
angličtina
Original language name
Magnetism in GaN layers implanted by La, Gd, Dy and Lu
Original language description
We present a complex study of rare earth elements implanted GaN layers grown by low pressure metalorganic vapor phase epitaxy on c-plane sapphire substrates. Gd, Dy, La and Lu ions were implanted with energies of 200 key and doses ranging from 5 x 10(13)to 4 x 10(17) atoms.cm(-2). The chemical composition and concentration profiles of ion-implanted layers were studied by secondary ion mass spectrometry and Rutherford back scattering. The structural properties of the layers were characterized by Rutherford back scattering/channeling and X-ray diffraction reciprocal space mapping.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BG - Nuclear, atomic and molecular physics, accelerators
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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