Diffuse X-Ray Scattering from Semiconductor Nanostructures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F09%3A00206360" target="_blank" >RIV/00216208:11320/09:00206360 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Diffuse X-Ray Scattering from Semiconductor Nanostructures
Original language description
X-ray scattering methods are frequently used for the investigation of semiconductor nanostructures. From the distribution reciprocal space of diffusely scattered intensity, it is possible to determine the spatial correlation properties of the nano-objects, their shapes, and the elastic strains in and around the nano-objects as well as their local chemical compositions. In this chapter, we present basic theoretical approaches for the description of diffuse X-ray scattering from nanostructures and presentsome experimental examples.
Czech name
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Czech description
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Classification
Type
C - Chapter in a specialist book
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Book/collection name
Diffuse Scattering and the Fundamental Properties of Materials
ISBN
1-60650-000-7
Number of pages of the result
28
Pages from-to
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Number of pages of the book
454
Publisher name
Momentum Press LLC
Place of publication
New Jersey
UT code for WoS chapter
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