Ultrafast photoluminescence spectroscopy of InAs/GaAs quantum dots

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F09%3A00207136" target="_blank" >RIV/00216208:11320/09:00207136 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Ultrafast photoluminescence spectroscopy of InAs/GaAs quantum dots
Original language description
We report the results of time-resolved photoluminescence spectroscopy of a double layer quantum dot structure with large spacer distance emitting at 1.3 m at room temperature. In ultrafast zero-time photoluminescence spectrum, we identified the transitions in GaAs barrier, in wetting layer and in quantum dots. Identical initial rise times give evidence of simultaneous filling of the quantum dot states. The excitation power dependence of photoluminescence dynamics reveals that the carrier dynamics are controlled by radiative recombination and cascade relaxation in quantum dot states. The overall picture of photoluminescence dynamics is in accord with a low concentration of nonradiative recombination channels in the studied structure which demonstrates its application potential.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
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Project
<a href="/en/project/GA202%2F06%2F0718" target="_blank" >GA202/06/0718: Quantum dot engineering</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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