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InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F08%3A00306889" target="_blank" >RIV/68378271:_____/08:00306889 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance

  • Original language description

    Optical properties of MOVPE grown InAs quantum dots in GaAs covered by thin InxGa1xAs strain reducing layer were studied by photomodulated reflectance and photoluminescence spectroscopy. The increasing In content in the strain reducing layer shifts the luminescence of quantum dots from 1.25 to 1.46 mum and narrows the photoluminescence linewidth. The strong photoluminescence red shift is caused both by the change of the band structure and the height of quantum dots which.

  • Czech name

    Struktury s InAs/GaAs kvantovými tečkami pokryté InGaAs pnutí redukující vrstvou charakterizované fotomodulovanou reflektancí

  • Czech description

    Optické vlastnosti InAs kvantových teček připravených metodou MOVPE překryté InxGa1xAs pnutí redukující vrstvou byly studovány fotomodulovanou reflekční a luminiscenční spektroskopií. S rostoucím obsahem In v InxGa1xAs krycí vrstvě dochází k posuvu emisní vlnové délky od 1,25 do 1,46 mum a zužování emisních linií. Velký posun emise je způsoben změnou pásové struktury a změnou výšky kvantových teček.

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2008

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Materials Science and Engineering B-Advanced Functional Solid-State Materials

  • ISSN

    0921-5107

  • e-ISSN

  • Volume of the periodical

    147

  • Issue of the periodical within the volume

    -

  • Country of publishing house

    CH - SWITZERLAND

  • Number of pages

    4

  • Pages from-to

    175-178

  • UT code for WoS article

  • EID of the result in the Scopus database