Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 ?m bands

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F11%3A00367915" target="_blank" >RIV/68378271:_____/11:00367915 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1166/jnn.2011.4223" target="_blank" >http://dx.doi.org/10.1166/jnn.2011.4223</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1166/jnn.2011.4223" target="_blank" >10.1166/jnn.2011.4223</a>

Result language
angličtina
Original language name
Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 ?m bands
Original language description
The effect of different InGaAs and GaAsSb strain reducing layers on PL and EL from self-assembled InAs/GaAs quantum dots grown by metal-organic vapour phase epitaxy was investigated. The aim was to shift their luminescence maximum towards optical communication wavelengths at 1.3 or 1.55 ?m. Results show that covering by InGaAs strain reducing layer provides stronger shift of photoluminescence maximum (up to 1.55 ?m) as compared to GaAsSb one with similar strain in the structure. This is caused by the increase of quantum dot size during InGaAs capping and reduction of quantum confinement of the electron wave function which spreads into the cap. Although strong electroluminescence at 1300 nm was achieved from quantum dots covered by both types of strainreducing layers, the aAsSb strain reducing layer is more suitable for long wavelength lectroluminescence due to higher electron confinement potential allowing suppression of thermal carrier escape from quantum dots.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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