Tracking defect type and strain relaxation in patterned Ge/Si(001) islands by x-ray forbidden reflection analysis
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10103783" target="_blank" >RIV/00216208:11320/11:10103783 - isvavai.cz</a>
Result on the web
<a href="http://prb.aps.org/abstract/PRB/v84/i7/e075314" target="_blank" >http://prb.aps.org/abstract/PRB/v84/i7/e075314</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1103/PhysRevB.84.075314" target="_blank" >10.1103/PhysRevB.84.075314</a>
Alternative languages
Result language
angličtina
Original language name
Tracking defect type and strain relaxation in patterned Ge/Si(001) islands by x-ray forbidden reflection analysis
Original language description
Plastic relaxation and formation of defects are crucial issues in the epitaxial growth of nanoparticles and thin films. Indeed, defects generate local stress in the crystalline lattice, which affects their surroundings and may lead to undesired effects such as reduced charge-carrier lifetime or nonradiative recombinations. Here, we use a nondestructive method based on x-ray diffuse scattering close to forbidden reflections to identify the defect types with a high sensitivity and quantify their average size and strain field. Combined with transmission electron microscopy, it offers opportunities to track both ensemble average and single defects inside three-dimensional structures. These techniques have been applied to partially embedded and high-Ge-content (x(Ge) = 0.87 +/- 0.06) dots selectively grown in 20-nm-sized pits on Si(001) surfaces through openings in a SiO(2) template. The stress in the 20-nm-wide Ge islands is relaxed not only by interfacial dislocations but also by microtwi
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physical Review B - Condensed Matter and Materials Physics
ISSN
1098-0121
e-ISSN
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Volume of the periodical
84
Issue of the periodical within the volume
7
Country of publishing house
US - UNITED STATES
Number of pages
9
Pages from-to
075314, 1-9
UT code for WoS article
000293702800011
EID of the result in the Scopus database
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