Strain relief and shape oscillations in site-controlled coherent SiGe islands

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10140016" target="_blank" >RIV/00216208:11320/13:10140016 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1088/0957-4484/24/33/335707" target="_blank" >http://dx.doi.org/10.1088/0957-4484/24/33/335707</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/0957-4484/24/33/335707" target="_blank" >10.1088/0957-4484/24/33/335707</a>

Result language

angličtina

Original language name

Strain relief and shape oscillations in site-controlled coherent SiGe islands

Original language description

Strain engineering and the crystalline quality of semiconductor nanostructures are important issues for electronic and optoelectronic devices. We report on defect-free SiGe island arrays resulting from Ge coverages of up to 38 monolayers grown on prepatterned Si(001) substrates. This represents a significant expansion of the parameter space known for the growth of perfect island arrays. A cyclic development of the Ge content and island shape was observed while increasing the Ge coverage. Synchrotron-based x-ray diffraction experiments and finite element method calculations allow us to study the strain behavior of such islands in great detail. In contrast to the oscillatory changes of island shape and average Ge content, the overall strain behavior of these islands exhibits a clear monotonic trend of progressive strain relaxation with increasing Ge coverage.

Czech name

—

Czech description

—

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

—

Project

—

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2013

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Nanotechnology

ISSN

0957-4484

e-ISSN

—

Volume of the periodical

24

Issue of the periodical within the volume

33

Country of publishing house

GB - UNITED KINGDOM

Number of pages

9

Pages from-to

—

UT code for WoS article

000322377600019

EID of the result in the Scopus database

—