Ge/Si islands in a three-dimensional island crystal studied by x-ray diffraction
Result description
An analysis of coplanar high-angle x-ray-diffraction data was performed and structural information on buried Ge islands forming a 3D island crystal was obtained. We have demonstrated that the combination of an analytical solution of the equilibrium equations of linear elasticity with kinematical scattering theory can be used to simulate the experimental x-ray-diffraction data. The strain state in the buried islands and their surrounding Si matrix was determined. The Ge content in the islands is found tobe on the average 40%, and the island shape does not change dramatically during capping.
Keywords
ASSEMBLED GE ISLANDSQUANTUM DOTSSTRAINNANOSTRUCTURESSTACKINGX-RAY DIFFRACTION
The result's identifiers
Result code in IS VaVaI
Alternative codes found
RIV/00216208:11320/05:00001504
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Ge/Si islands in a three-dimensional island crystal studied by x-ray diffraction
Original language description
An analysis of coplanar high-angle x-ray-diffraction data was performed and structural information on buried Ge islands forming a 3D island crystal was obtained. We have demonstrated that the combination of an analytical solution of the equilibrium equations of linear elasticity with kinematical scattering theory can be used to simulate the experimental x-ray-diffraction data. The strain state in the buried islands and their surrounding Si matrix was determined. The Ge content in the islands is found tobe on the average 40%, and the island shape does not change dramatically during capping.
Czech name
Studium třídimnzionálního krystalu Ge/Si ostrůvků RTG difrakcí
Czech description
V článku je prezentována analýza experimentálních dat z měření na tří dimenzionálním krystalu Ge/Si(001) ostrůvků ve vysokoúhlé RTG difrakci. Prokázali jsme, že kombinace analytického řešení rovnic rovnováhy lineární elasticity a teorie kinematického rozptylu mohou být úspěšně použity k simulaci dat z RTG difrakce. Byly získány strukturní vlastnosti Ge ostrůvků, deformace krystalografické mřížky v ostrůvcích a okolní Si matici. Ukázalo se, že po zarostení do Si matice klesla koncentrace Ge v ostrůvcíchna 40%, jejich tvar se však výrazně nezměnil.
Classification
Type
Jx - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
GA202/03/0148: Anomalous x-ray scattering from semiconductor nanostructures
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2005
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Applied Physics
ISSN
0021-8979
e-ISSN
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Volume of the periodical
98
Issue of the periodical within the volume
7
Country of publishing house
US - UNITED STATES
Number of pages
9
Pages from-to
073517
UT code for WoS article
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EID of the result in the Scopus database
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Basic information
Result type
Jx - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP
BM - Solid-state physics and magnetism
Year of implementation
2005