Strain distribution in Si capping layers on SiGe islands: influence of cap thickness and footprint in reciprocal space

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F12%3A10126345" target="_blank" >RIV/00216208:11320/12:10126345 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1088/0957-4484/23/46/465705" target="_blank" >http://dx.doi.org/10.1088/0957-4484/23/46/465705</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/0957-4484/23/46/465705" target="_blank" >10.1088/0957-4484/23/46/465705</a>

Result language

angličtina

Original language name

Strain distribution in Si capping layers on SiGe islands: influence of cap thickness and footprint in reciprocal space

Original language description

We present investigations on the strain properties of silicon capping layers on top of regular SiGe island arrays, in dependence on the Si-layer thickness. Such island arrays are used as stressors for the active channel in field-effect transistors wherethe desired tensile strain in the Si channel is a crucial parameter for the performance of the device. The thickness of the Si cap was varied from 0 to 30 nm. The results of high resolution x-ray diffraction experiments served as input to perform detailed strain calculations via finite element method models. Thus, detailed information on the Ge distribution within the buried islands and the strain interaction between the SiGe island and Si cap was obtained. It was found that the tensile strain within the Si capping layer strongly depends on its thickness, even if the Ge concentration of the buried dot remains unchanged, with tensile strains degrading if thicker Si layers are used.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Nanotechnology

ISSN

0957-4484

e-ISSN

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Volume of the periodical

23

Issue of the periodical within the volume

46

Country of publishing house

GB - UNITED KINGDOM

Number of pages

10

Pages from-to

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UT code for WoS article

000310460300020

EID of the result in the Scopus database

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