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Spin injection from two-dimensional electron and hole gases in resonant tunneling diodes

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10106101" target="_blank" >RIV/00216208:11320/11:10106101 - isvavai.cz</a>

  • Result on the web

    <a href="http://apl.aip.org/resource/1/applab/v99/i23/p233507_s1" target="_blank" >http://apl.aip.org/resource/1/applab/v99/i23/p233507_s1</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1063/1.3668087" target="_blank" >10.1063/1.3668087</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Spin injection from two-dimensional electron and hole gases in resonant tunneling diodes

  • Original language description

    We have investigated the polarized-resolved photoluminescence from the contact layers and the quantum-well in an n-type GaAs/GaAlAs resonant tunneling diode for magnetic fields up to 19 T. The optical emission from the GaAs contact layers comprises the recombination from highly spinpolarized two-dimensional electron and hole gases with free tunneling carriers. Both the energy position and intensity of this indirect recombination are voltage-dependent and show remarkably abrupt variations near scattering-assisted tunneling resonances. Our results show that these two dimensional gases act as spin-polarized sources for carriers tunneling through the well in resonant tunneling diodes.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2011

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Applied Physics Letters

  • ISSN

    0003-6951

  • e-ISSN

  • Volume of the periodical

    99

  • Issue of the periodical within the volume

    23

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    4

  • Pages from-to

    233507, 1-4

  • UT code for WoS article

    000298006100093

  • EID of the result in the Scopus database