Magneto-optical investigation of two-dimensional gases in n-type resonant tunneling diodes

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F12%3A10106103" target="_blank" >RIV/00216208:11320/12:10106103 - isvavai.cz</a>

Result on the web

<a href="http://iopscience.iop.org/0268-1242/27/1/015018?fromSearchPage=true" target="_blank" >http://iopscience.iop.org/0268-1242/27/1/015018?fromSearchPage=true</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/0268-1242/27/1/015018" target="_blank" >10.1088/0268-1242/27/1/015018</a>

Result language

angličtina

Original language name

Magneto-optical investigation of two-dimensional gases in n-type resonant tunneling diodes

Original language description

We have studied the polarized emission from the contact layers and the quantum well of asymmetric n-type GaAs/GaAlAs resonant tunneling diodes under high magnetic fields (up to 19 T) parallel to the tunnel current. The photoluminescence from the GaAs contact layers shows evidence of the recombination from a two-dimensional hole gas accumulated next to the GaAlAs barrier and free carriers. Both the energy position and the intensity of this emission are voltage dependent. In addition, the photoluminescence from the two-dimensional hole gas and quantum well is strongly spin-polarized under the applied voltage and high magnetic fields. Pronounced oscillatory features are observed in the magnetic field dependence of the polarization degree from the quantumwell and the two-dimensional hole emissions at integer filling factors. The obtained data show that resonant tunneling diodes are interesting systems to study the physical properties of voltage-controlled two-dimensional gases in the accu

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Semiconductor Science and Technology

ISSN

0268-1242

e-ISSN

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Volume of the periodical

27

Issue of the periodical within the volume

1

Country of publishing house

GB - UNITED KINGDOM

Number of pages

7

Pages from-to

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UT code for WoS article

000300623400020

EID of the result in the Scopus database

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