Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F16%3A10328948" target="_blank" >RIV/00216208:11320/16:10328948 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1088/0022-3727/49/16/165104" target="_blank" >http://dx.doi.org/10.1088/0022-3727/49/16/165104</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/0022-3727/49/16/165104" target="_blank" >10.1088/0022-3727/49/16/165104</a>

Result language
angličtina
Original language name
Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes
Original language description
We have investigated the polarization-resolved electroluminescence (EL) of a p-i-n GaAs/AlAs/InGaAs resonant tunneling diode (RTD) containing a GaMnAs (x = 5%) spin injector under high magnetic fields. We demonstrate that under hole resonant tunneling condition, the GaMnAs contact acts as an efficient spin-polarized source for holes tunneling through the device. Polarization degrees up to 80% were observed in the device around the hole resonance at 2 K under 15 T. Our results could be valuable for improving the hole-spin injection in GaMnAs-based spintronic devices.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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