Compliant substrate versus plastic relaxation effects in Ge nanoheteroepitaxy on free-standing Si(001) nanopillars
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10106219" target="_blank" >RIV/00216208:11320/11:10106219 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1063/1.3644948" target="_blank" >http://dx.doi.org/10.1063/1.3644948</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.3644948" target="_blank" >10.1063/1.3644948</a>
Alternative languages
Result language
angličtina
Original language name
Compliant substrate versus plastic relaxation effects in Ge nanoheteroepitaxy on free-standing Si(001) nanopillars
Original language description
We report on the structural characterization of Ge clusters selectively grown by chemical vapor deposition on free-standing 50 nm wide Si(001) nanopillars. Synchrotron based x-ray diffraction studies and transmission electron microscopy were performed toexperimentally verify the nanoheteroepitaxy theory as a technique to grow high quality Ge on Si(001). Although the structure dimensions are comparable to the theoretical values required for the strain partitioning phenomenon, the compliant character ofSi is not unambiguously proven. In consequence, the strain is relieved by nucleation of misfit dislocations at the Ge/Si interface. By gliding out of threading arms, high quality Ge nanostructures are achieved.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Applied Physics Letters
ISSN
0003-6951
e-ISSN
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Volume of the periodical
99
Issue of the periodical within the volume
14
Country of publishing house
US - UNITED STATES
Number of pages
3
Pages from-to
1-3
UT code for WoS article
000295625100022
EID of the result in the Scopus database
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