Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured Silicon

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10106230" target="_blank" >RIV/00216208:11320/11:10106230 - isvavai.cz</a>

Result on the web

<a href="http://www.scientific.net/SSP.178-179.43" target="_blank" >http://www.scientific.net/SSP.178-179.43</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.4028/www.scientific.net/SSP.178-179.43" target="_blank" >10.4028/www.scientific.net/SSP.178-179.43</a>

Result language

angličtina

Original language name

Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured Silicon

Original language description

Selective epitaxial growth of germanium (Ge) on nano-structured Si(001) wafers is studied to evaluate the applicability of the nano-heteroepitaxy (NHE) approach on Ge-Si system. Based on a gate spacer technology established in advanced silicon microelectronics periodic arrays of nano-scaled Si islands are prepared, where Ge is deposited on top by reduced pressure CVD. The spacing of these structures is 360 nm. The structural perfection of the deposited Ge is investigated by transmission electron microscopy and X-ray diffraction. It is found that SiO2 used as masking material is responsible for the suppression of the desired strain partitioning effect according to NHE. Even for 10 nm oxide thickness, the lattice of Ge layers deposited on Si nano-islandsrelaxes completely by generation of misfit dislocations at the interface. The occurrence of additional structural defects like stacking faults and micro twins can be controlled by suited growth conditions.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2011

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Solid State Phenomena

ISSN

1012-0394

e-ISSN

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Volume of the periodical

178-179

Issue of the periodical within the volume

2011

Country of publishing house

CH - SWITZERLAND

Number of pages

7

Pages from-to

43-49

UT code for WoS article

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EID of the result in the Scopus database

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