Characterization of hydrogenated silicon thin films and diode structures with integrated germanium nanoparticles
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388980%3A_____%2F18%3A00499741" target="_blank" >RIV/61388980:_____/18:00499741 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/18:00496537 RIV/67985858:_____/18:00496537
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Characterization of hydrogenated silicon thin films and diode structures with integrated germanium nanoparticles
Original language description
P-I-N diode structures based on the thin films of amorphous hydrogenated silicon (a-Si: H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique were prepared with embedded Si and Ge nanoparticles. The Reactive Laser Ablation (RLA) of germanium target was used to cover the intrinsic a-Si: H layer by Ge NPs under a low pressure of the silane. The RLA was performed using focused excimer ArF laser beam under SiH4 background atmosphere. Reaction between ablated Ge NPs and SiH4 led to formation of Ge NPs covered by thin GeSi: H layer. The deposited NPs were covered and stabilized by a-Si: H layer by PECVD. Those two deposition processes were alternated repeatedly. Volt-ampere characteristics of final diode structures were measured in dark and under illumination as well as their electroluminescence spectra.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
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OECD FORD branch
10402 - Inorganic and nuclear chemistry
Result continuities
Project
<a href="/en/project/LTC17029" target="_blank" >LTC17029: Study of optoelectronic processes in hybrid systems for third generation solar cells</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Nanocon 2017 : conference proceedings : 9th International Conference on Nanomaterials - Research & Application
ISBN
9788087294819
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
"/2018/"
Publisher name
Tanger Ltd.
Place of publication
Ostrava
Event location
Brno
Event date
Oct 18, 2017
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000452823300019