Progress of vaccum deposition techniques for Si:H thin films structures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00471062" target="_blank" >RIV/68378271:_____/16:00471062 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Progress of vaccum deposition techniques for Si:H thin films structures
Original language description
For evaluation of new quality Si:H thin films we already used the samples deposited by two technological procedures, which allows the integration of convenient nanoparticles of different semiconductors into the Si:H structures. The first one is a combination of PECVD and Reactive Deposition Epitaxy (RDE) [1] and second one the PECVD and Reactive Laser Ablation (RLA). In both cases the current technology does not allow to deposit the whole diode structure without interruption of vacuum process. Up to now only in the case of PECVD and Vacuum Evaporation together with Plasma Treatment (VE+PT) the all in situ deposition processes where realized in special vacuum chamber. The actual results, namely the influence of integrated Mg2Si NPs on the electroluminescence and reached basic parameters - Voc, FF and Isc of diode structures measured under illumination will be introduced.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA13-12386S" target="_blank" >GA13-12386S: Photoconductivity and dynamics of excitations in nanostructured and disordered semiconductors on ultrafast time scale</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů