The Combined Technological Methods for Deposition of Si:H Thin Films and Structures with Embedded NPs

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21460%2F15%3A00241266" target="_blank" >RIV/68407700:21460/15:00241266 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1166/asem.2015.1689" target="_blank" >http://dx.doi.org/10.1166/asem.2015.1689</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1166/asem.2015.1689" target="_blank" >10.1166/asem.2015.1689</a>

Result language
angličtina
Original language name
The Combined Technological Methods for Deposition of Si:H Thin Films and Structures with Embedded NPs
Original language description
Up to now the deposited thin film structures on the base of hydrogenated silicon (Si:H) by PECVD technique are applied in many devices. Although the quality of Si:H thin films was modified by change of technological parameters and Si:H was studied intensively for many years, the possible applications are still limited. Therefore, we study the combined methods of Si:H thin films deposition with embedded nanoparticles, modify the quality of the Si:H thin films and made them convenient for further applications, for example light emitting diodes (LEDs). Our paper is focused on technology details of deposition of PbS and Mg2Si nanoparticles embedded in a-Si matrix with the emphasis on the in situ deposition without interruption of vacuum process.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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