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The combined technological methods for deposition of Si:H thin films and structures with in situ embedded nanoparticles

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00451866" target="_blank" >RIV/68378271:_____/15:00451866 - isvavai.cz</a>

  • Alternative codes found

    RIV/67985858:_____/15:00451866

  • Result on the web

    <a href="http://dx.doi.org/10.1166/asem.2015.1689" target="_blank" >http://dx.doi.org/10.1166/asem.2015.1689</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1166/asem.2015.1689" target="_blank" >10.1166/asem.2015.1689</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    The combined technological methods for deposition of Si:H thin films and structures with in situ embedded nanoparticles

  • Original language description

    Up to now the deposited thin film structures on the base of hydrogenated silicon (Si:H) by PECVD technique are applied in many devices. Although the quality of Si:H thin films was modified by change of technological parameters and Si:H was studied intensively for many years, the possible applications are still limited. Therefore, we study the combined methods of Si:H thin films deposition with embedded nanoparticles, modify the quality of the Si:H thin films and made them convenient for further applications, for example light emitting diodes (LEDs. Our paper is focused on technology details of deposition of PbS and Mg2Si nanoparticles embedded in a-Si matrix with the emphasis on the in situ deposition without interruption of vacuum process.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/LH12236" target="_blank" >LH12236: Quantum size effect in optoelectronic properties of nanostructures embedded in semiconductor layers.</a><br>

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2015

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Advanced Science, Engineering and Medicine

  • ISSN

    2164-6627

  • e-ISSN

  • Volume of the periodical

    7

  • Issue of the periodical within the volume

    4

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    5

  • Pages from-to

    265-269

  • UT code for WoS article

  • EID of the result in the Scopus database