The combined technological methods for deposition of Si:H thin films and structures with in situ embedded nanoparticles
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00451866" target="_blank" >RIV/68378271:_____/15:00451866 - isvavai.cz</a>
Alternative codes found
RIV/67985858:_____/15:00451866
Result on the web
<a href="http://dx.doi.org/10.1166/asem.2015.1689" target="_blank" >http://dx.doi.org/10.1166/asem.2015.1689</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1166/asem.2015.1689" target="_blank" >10.1166/asem.2015.1689</a>
Alternative languages
Result language
angličtina
Original language name
The combined technological methods for deposition of Si:H thin films and structures with in situ embedded nanoparticles
Original language description
Up to now the deposited thin film structures on the base of hydrogenated silicon (Si:H) by PECVD technique are applied in many devices. Although the quality of Si:H thin films was modified by change of technological parameters and Si:H was studied intensively for many years, the possible applications are still limited. Therefore, we study the combined methods of Si:H thin films deposition with embedded nanoparticles, modify the quality of the Si:H thin films and made them convenient for further applications, for example light emitting diodes (LEDs. Our paper is focused on technology details of deposition of PbS and Mg2Si nanoparticles embedded in a-Si matrix with the emphasis on the in situ deposition without interruption of vacuum process.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/LH12236" target="_blank" >LH12236: Quantum size effect in optoelectronic properties of nanostructures embedded in semiconductor layers.</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Advanced Science, Engineering and Medicine
ISSN
2164-6627
e-ISSN
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Volume of the periodical
7
Issue of the periodical within the volume
4
Country of publishing house
US - UNITED STATES
Number of pages
5
Pages from-to
265-269
UT code for WoS article
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EID of the result in the Scopus database
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