Preparation and characterization of Ge epitaxially grown on nano-structured periodic Si pillars and bars on Si(001) substrate

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F12%3A10126509" target="_blank" >RIV/00216208:11320/12:10126509 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1016/j.tsf.2011.10.178" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2011.10.178</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2011.10.178" target="_blank" >10.1016/j.tsf.2011.10.178</a>

Result language

angličtina

Original language name

Preparation and characterization of Ge epitaxially grown on nano-structured periodic Si pillars and bars on Si(001) substrate

Original language description

The selective epitaxial growth of germanium on nano-structured periodic silicon pillars and bars with 360 nm periodicity on Si(001) substrate is studied to evaluate the applicability of nano-heteroepitaxy on the Ge-Si system for different fields of application. It is found that SiO2 used as masking material plays the key role to influence the strain situation in the Si nano-islands. To analyze this in detail, X-ray diffraction techniques in combination with theoretical simulations based on the kinematical X-ray scattering from laterally strained nano-structures and finite element method (FEM) calculations of the strain field are applied. The oxide related strain in the Si scales about linearly with the thickness of the SiO2 mask, but FEM simulations supposing a homogeneous stress distribution in the oxide are not sufficient to describe the local strain distribution in the nano-structures. It is demonstrated that the Ge lattice relaxes completely during growth on the Si nano-islands by

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Thin Solid Films

ISSN

0040-6090

e-ISSN

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Volume of the periodical

520

Issue of the periodical within the volume

8

Country of publishing house

CH - SWITZERLAND

Number of pages

5

Pages from-to

3240-3244

UT code for WoS article

000301710800023

EID of the result in the Scopus database

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