X-ray diffraction analysis of surface Si Nanostructures used for Ge nanoheteroepitaxy

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10106194" target="_blank" >RIV/00216208:11320/11:10106194 - isvavai.cz</a>

Result on the web

<a href="http://www.xray.cz/ms/bul2011-3/matejova.pdf" target="_blank" >http://www.xray.cz/ms/bul2011-3/matejova.pdf</a>

DOI - Digital Object Identifier

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Result language

angličtina

Original language name

X-ray diffraction analysis of surface Si Nanostructures used for Ge nanoheteroepitaxy

Original language description

The integration of low-defect Ge layers on Si substrate is of in creas ing interest due to its possible ap plications in optoelectronics and CMOS tech nologies. To avoid nucleation of dislocations caused by relatively large lattice mismatch between Si and Ge, nanoheteroepitaxy strainrelieving mechanism was suggested. To prove the functional ity of this mechanism, we investigate the strain field in Si line nanostructures covered by SiO2 growth mask with dimensions in order of 100 nm. By compar ison of exper i mental XRD data with simulations (X-ray kinematical scattering theory), we refined the shape coordinates of the nanostructures (i.e. coordinates of selected points from Si-pillar borderline, between which the border line can be interpolated by linear func tion with minor error) taken from TEM images. We carried out a strain field simulation based on the elasticity theory and showed in sufficiency of conventional model of the strain in Si after thermal oxidation. Therefore we implem

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2011

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Materials Structure in Chemistry, Biology Physics and Technology (Bulletin of the Czech and Slovak Crystallographic Association.)

ISSN

1211-5894

e-ISSN

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Volume of the periodical

18

Issue of the periodical within the volume

3

Country of publishing house

CZ - CZECH REPUBLIC

Number of pages

5

Pages from-to

199-203

UT code for WoS article

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EID of the result in the Scopus database

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