Growth and properties of Ti-Cu films with respect to plasma parameters in dual-magnetron sputtering discharges
Result description
Properties of different methods of magnetron sputtering (dc-MS, dual-MS and dual-HiPIMS) are studied and compared with respect to intermetallic Ti-Cu film formation. The quality and features of thin films are strongly influenced by the energy of incomingparticles. The ion velocity distribution functions (IVDFs) were measured by time-resolved retarding field analyzer (RFA) in the substrate position. Thin films were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffractometry (XRD) and X-ray reflectometry (XR). Properties and crystallography of Ti-Cu films are discussed as a function of ion energy which is affected by the mode of sputtering. It was found that IVDFs measured in pulsed discharges exhibit double-peak distribution. The IVDFs reach the maximum at ion energies about similar to 8 eV. The ion saturated current is highest in dual-HiPIMS discharge (similar to 5 mu A/cm(2)) and is mostly represented by Cu(+) and Ar(+) ions. The mode of sputtering influences chemic
Keywords
The result's identifiers
Result code in IS VaVaI
Alternative codes found
RIV/68378271:_____/11:00373839
Result on the web
DOI - Digital Object Identifier
Alternative languages
Result language
angličtina
Original language name
Growth and properties of Ti-Cu films with respect to plasma parameters in dual-magnetron sputtering discharges
Original language description
Properties of different methods of magnetron sputtering (dc-MS, dual-MS and dual-HiPIMS) are studied and compared with respect to intermetallic Ti-Cu film formation. The quality and features of thin films are strongly influenced by the energy of incomingparticles. The ion velocity distribution functions (IVDFs) were measured by time-resolved retarding field analyzer (RFA) in the substrate position. Thin films were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffractometry (XRD) and X-ray reflectometry (XR). Properties and crystallography of Ti-Cu films are discussed as a function of ion energy which is affected by the mode of sputtering. It was found that IVDFs measured in pulsed discharges exhibit double-peak distribution. The IVDFs reach the maximum at ion energies about similar to 8 eV. The ion saturated current is highest in dual-HiPIMS discharge (similar to 5 mu A/cm(2)) and is mostly represented by Cu(+) and Ar(+) ions. The mode of sputtering influences chemic
Czech name
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Czech description
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Classification
Type
Jx - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BL - Plasma physics and discharge through gases
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Z - Vyzkumny zamer (s odkazem do CEZ)
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
European Physical Journal D
ISSN
1434-6060
e-ISSN
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Volume of the periodical
64
Issue of the periodical within the volume
2
Country of publishing house
DE - GERMANY
Number of pages
9
Pages from-to
427-435
UT code for WoS article
000296630800029
EID of the result in the Scopus database
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Basic information
Result type
Jx - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP
BL - Plasma physics and discharge through gases
Year of implementation
2011