Symmetrical current-voltage characteristic of a metal-semiconductor-metal structure of Schottky contacts and parameter retrieval of a CdTe structure

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F12%3A10125914" target="_blank" >RIV/00216208:11320/12:10125914 - isvavai.cz</a>

Alternative codes found

RIV/00216305:26220/11:PU95394

Result on the web

<a href="http://dx.doi.org/10.1088/0268-1242/27/1/015006" target="_blank" >http://dx.doi.org/10.1088/0268-1242/27/1/015006</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/0268-1242/27/1/015006" target="_blank" >10.1088/0268-1242/27/1/015006</a>

Result language

angličtina

Original language name

Symmetrical current-voltage characteristic of a metal-semiconductor-metal structure of Schottky contacts and parameter retrieval of a CdTe structure

Original language description

Symmetrical, non-linear and current-voltage (I-V) characteristics of a metal-semiconductor-metal (M-S-M) structure of two metallic Schottky contacts fabricated to a p-type semiconductor were modeled by treating the semiconductor as a resistor sandwichedbetween two identical head-to-head Schottky barriers. The voltage distributions along the M-S-M structure were numerically determined and found that the voltage drop across the reverse-biased Schottky barrier is dominating at the low bias voltage, and the dominant range depends on the value of the resistor of the semiconductor bulk. The field dependence of barrier height due to the image force was proposed to be the mechanism for the current through the M-S-M structure when the voltage drop across the reverse-biased barrier is dominating. The proposed model was applied to the I-V curves measured at different temperatures on low-resistivity p-type CdTe with Au contacts and the density of the effective acceptors calculated, and the zero-f

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Semiconductor Science and Technology

ISSN

0268-1242

e-ISSN

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Volume of the periodical

27

Issue of the periodical within the volume

1

Country of publishing house

GB - UNITED KINGDOM

Number of pages

6

Pages from-to

015006-015011

UT code for WoS article

000300623400008

EID of the result in the Scopus database

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