Photocurrent spectra of semi-insulating GaAs M/S/M diodes: Role of the contacts

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61988987%3A17310%2F16%3AA1701J9Z" target="_blank" >RIV/61988987:17310/16:A1701J9Z - isvavai.cz</a>

Alternative codes found

RIV/68378271:_____/16:00458953

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Photocurrent spectra of semi-insulating GaAs M/S/M diodes: Role of the contacts

Original language description

Current?voltage (I?V) characteristics and photocurrent (PC) spectra (600?1000 nm) of the metal?semiconductor?metal (M?S?M) structures based on high-quality undoped semi-insulating (SI) GaAs with AuGeNi backside contact and different semitransparent top contacts (AuGeNi, Pt, Gd and Nd) are reported, and analysed with the help of a simple physical model. It is shown that the dominant peak in the PC spectra and the change of photocurrent sign can be explained by a presence of two Schottky-like barriers at the top and bottom surfaces. In addition, I?V and PC results show dependence on the bias and its polarity, and on the contact metal used. The possible origins of these effects are discussed.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2016

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Solid-State Electronics

ISSN

0038-1101

e-ISSN

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Volume of the periodical

118

Issue of the periodical within the volume

4

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

6

Pages from-to

30-35

UT code for WoS article

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EID of the result in the Scopus database

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