Photocurrent spectroscopy of semi-insulating GaAs with a new contact metallization: indication of 2DEG formed at the M-S interface
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F10%3A00349314" target="_blank" >RIV/68378271:_____/10:00349314 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Photocurrent spectroscopy of semi-insulating GaAs with a new contact metallization: indication of 2DEG formed at the M-S interface
Original language description
SI GaAs based photodetectors were studied by photocurrent and current-voltage methods. Features observed in photocurrent spectra of the detectors with Gd top contact indicate special properties of this kind of the metallization and, possibly, a formationof 2D system near the contact.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
APCOM 2010
ISBN
978-80-227-3307-6
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
Slovak University of Technology
Place of publication
Bratislava
Event location
Malá Lučivná
Event date
Jun 16, 2010
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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