Photocurrent spectroscopy of semi-insulating GaAs M-S-M diodes with a new contact metallization

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00440049" target="_blank" >RIV/68378271:_____/14:00440049 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Photocurrent spectroscopy of semi-insulating GaAs M-S-M diodes with a new contact metallization
Original language description
The work reports on the photocurrent (PC) study of diodes based on bulk semi-insulating (SI) GaAs with novel contacts including low work function metals, such as Gd and Nd. SI GaAs sandwich-like structures with topside electrodes of Gd/Au, Nd/Au, Pt/Au,and AuGeNi eutectic alloy and bottom AuGeNi eutectic alloy were fabricated. Their electrical and photoelectronic properties were investigated by current-voltage measurements and PC spectroscopy performed at room temperature in the spectral range of 600-1000 nm. A simple photovoltaic model was used to give a qualitative explanation of the observed spectral characteristics at zero bias.
Czech name
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Czech description
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of the 20th International Conference on Applied Physics of Condensed Matter
ISBN
978-80-227-4179-8
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
214-218
Publisher name
FEI STU
Place of publication
Bratislava
Event location
Štrbské Pleso
Event date
Jun 25, 2014
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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